Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
نویسندگان
چکیده
منابع مشابه
Hydrogen sensors based on Pt-AlGaN/AlN/GaN schottky diode
Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2019
ISSN: 2168-6734
DOI: 10.1109/jeds.2019.2923204